Produktlista
| Jämföra | Bild | Del # | Tillverkare | Beskrivning | Lager | Ecad -modell | RoHS | FET-funktionen | Avlopp till källspänning (Vdss) | Ström - Kontinuerlig avlopp (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Laddning (Qg) (Max) @ Vgs | Inputkapacitans (Ciss) (Max) @ Vds | Spänning - Test | Drivspänning (Max Rds På, Min Rds På) | Vgs (Max) | FET-typ | Andra namn | Basproduktnummer | Paket | Serier | Tillverkarens varunummer | Beskrivning | Fuktkänslighetsnivå (MSL) | Tillverkarens normala ledtid | Utvidgad beskrivning | RoHS-status | Teknologi | Driftstemperatur | Monteringstyp | Förpackning / Fodral | Polarisering | Leverantörs Device Package | Spänning - Uppdelning | Effektdissipation (Max) | Kapacitansförhållande | Kvantitet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTTFSC4821NTAG | onsemi | MOSFET 30V 57A 8WDFN | I lager3770 pcs | - | - | 13.5A (Ta) | - | - | - | - | - | - | - | - | - | NTTFSC | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-PowerWDFN | - | 8-WDFN (3.3x3.3) | - | - | - | ||||
 |
IPD135N03LG | Infineon Technologies | OPTLMOS N-CHANNEL POWER MOSFET | I lager5290 pcs | - | 30 V | 30A (Tc) | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10 nC @ 10 V | 1000 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | PG-TO252-3-11 | - | 31W (Tc) | - | ||||
|
IRF6613TR1PBF | Infineon Technologies | MOSFET N-CH 40V 23A DIRECTFET | I lager3830 pcs | - | 40 V | 23A (Ta), 150A (Tc) | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63 nC @ 4.5 V | 5950 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MT | - | DIRECTFET™ MT | - | 2.8W (Ta), 89W (Tc) | - | ||||
|
IRF3708PBF | International Rectifier | HEXFET SMPS POWER MOSFET | I lager5050 pcs | - | 30 V | 62A (Tc) | 12mOhm @ 15A, 10V | 2V @ 250µA | 24 nC @ 4.5 V | 2417 pF @ 15 V | - | 2.8V, 10V | ±12V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 87W (Tc) | - | ||||
|
FQU3N50CTU | onsemi | MOSFET N-CH 500V 2.5A IPAK | I lager3600 pcs | - | 500 V | 2.5A (Tc) | 2.5Ohm @ 1.25A, 10V | 4V @ 250µA | 13 nC @ 10 V | 365 pF @ 25 V | - | 10V | ±30V | N-Channel | - | FQU3N50 | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 35W (Tc) | - | ||||
|
IRFI3306GPBF | International Rectifier | IRFI3306G - 60V SINGLE N-CHANNEL | I lager16010 pcs | - | 60 V | 71A (Tc) | 4.2mOhm @ 43A, 10V | 4V @ 1.037mA | 135 nC @ 10 V | 4685 pF @ 50 V | - | 10V | ±20V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | - | PG-TO220 Full Pack | - | 46W (Tc) | - | ||||
 |
RJK03K4DPA-00#J5A | Renesas Electronics America Inc | N-CHANNEL POWER SWITCHING MOSFET | I lager36100 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
|
AUIRF1404ZS | International Rectifier | MOSFET N-CH 40V 160A D2PAK | I lager23851 pcs | - | 40 V | 160A (Tc) | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | 4340 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK | - | 200W (Tc) | - | ||||
 |
STL11N6F7 | STMicroelectronics | MOSFET N-CH 60V 11A POWERFLAT | I lager3780 pcs | - | 60 V | 11A (Ta) | 12mOhm @ 5.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | 1035 pF @ 30 V | - | 10V | ±20V | N-Channel | - | STL11 | Tape & Reel (TR) | STripFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | PowerFlat™ (3.3x3.3) | - | 2.9W (Ta), 48W (Tc) | - | ||||
|
IRFU3910 | Infineon Technologies | MOSFET N-CH 100V 16A IPAK | I lager4730 pcs | - | 100 V | 16A (Tc) | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | 640 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Tube | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | IPAK (TO-251AA) | - | 79W (Tc) | - | ||||
|
RJK0305DPB-02#J0 | Renesas Electronics America Inc | MOSFET N-CH 30V 30A LFPAK | I lager5060 pcs | - | 30 V | 30A (Ta) | 8mOhm @ 15A, 10V | - | 8 nC @ 4.5 V | 1250 pF @ 10 V | - | 4.5V, 10V | +16V, -12V | N-Channel | - | RJK0305 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | Surface Mount | SC-100, SOT-669 | - | LFPAK | - | - | - | ||||
 |
TK15A60U(STA4,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO220SIS | I lager4710 pcs | - | 600 V | 15A (Ta) | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | 950 pF @ 10 V | - | 10V | ±30V | N-Channel | - | TK15A60 | Tube | DTMOSII | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220SIS | - | 40W (Tc) | - | ||||
 |
DMN7022LFG-13 | Diodes Incorporated | MOSFET N-CH 75V 7.8A PWRDI3333-8 | I lager5310 pcs | - | 75 V | 7.8A (Ta) | 22mOhm @ 7.2A, 10V | 3V @ 250µA | 56.5 nC @ 10 V | 2737 pF @ 35 V | - | 4.5V, 10V | ±20V | N-Channel | - | DMN7022 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | PowerDI3333-8 | - | 900mW (Ta) | - | ||||
 |
FCP170N60 | Fairchild Semiconductor | MOSFET N-CH 600V 22A TO220-3 | I lager8900 pcs | - | 600 V | 22A (Tc) | 170mOhm @ 11A, 10V | 3.5V @ 250µA | 55 nC @ 10 V | 2860 pF @ 380 V | - | 10V | ±20V | N-Channel | - | - | Bulk | SuperFET® II | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 227W (Tc) | - | ||||
|
NVMFS5A140PLZT1G | onsemi | MOSFET P-CH 40V 20A/140A 5DFN | I lager3740 pcs | - | 40 V | 20A (Ta), 140A (Tc) | 4.2mOhm @ 50A, 10V | 2.6V @ 1mA | 136 nC @ 10 V | 7400 pF @ 20 V | - | 4.5V, 10V | ±20V | P-Channel | - | NVMFS5 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 3.8W (Ta), 200W (Tc) | - | ||||
|
MTB6N60E1 | onsemi | N-CHANNEL POWER MOSFET | I lager4470 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
|
HUF75645P3 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 7 | I lager4810 pcs | - | 100 V | 75A (Tc) | 14mOhm @ 75A, 10V | 4V @ 250µA | 238 nC @ 20 V | 3790 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Bulk | UltraFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 310W (Tc) | - | ||||
 |
SI7456CDP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 27.5A PPAK SO-8 | I lager58420 pcs | - | 100 V | 27.5A (Tc) | 23.5mOhm @ 10A, 10V | 2.8V @ 250µA | 23 nC @ 10 V | 730 pF @ 50 V | - | 4.5V, 10V | ±20V | N-Channel | - | SI7456 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 5W (Ta), 35.7W (Tc) | - | ||||
 |
2N7002BKM315 | Nexperia USA Inc. | NOW NEXPERIA 2N7002BKM - SMALL S | I lager4150 pcs | - | 60 V | 450mA (Ta) | 1.6Ohm @ 500mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 50 pF @ 10 V | - | 10V | ±20V | N-Channel | - | 2N7002 | Bulk | Automotive, AEC-Q101, TrenchMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | - | SOT-883 | - | 360mW (Ta) | - | ||||
 |
TT8U1TR | Rohm Semiconductor | MOSFET P-CH 20V 2.4A 8TSST | I lager120690 pcs | Schottky Diode (Isolated) | 20 V | 2.4A (Ta) | 105mOhm @ 2.4A, 4.5V | 1V @ 1mA | 6.7 nC @ 4.5 V | 850 pF @ 10 V | - | 1.5V, 4.5V | ±10V | P-Channel | - | TT8U1 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | - | 8-TSST | - | 1.25W (Ta) | - | ||||
|
DMN4060SVT-7 | Diodes Incorporated | MOSFET N-CH 45V 4.8A TSOT26 | I lager335030 pcs | - | 45 V | 4.8A (Ta) | 46mOhm @ 4.3A, 10V | 3V @ 250µA | 22.4 nC @ 10 V | 1287 pF @ 25 V | - | 4.5V, 10V | ±20V | N-Channel | - | DMN4060 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | TSOT-26 | - | 1.2W (Ta) | - | ||||
|
FDD4N60NZ | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 3 | I lager5200 pcs | - | 600 V | 3.4A (Tc) | 2.5Ohm @ 1.7A, 10V | 5V @ 250µA | 10.8 nC @ 10 V | 510 pF @ 25 V | - | 10V | ±25V | N-Channel | - | - | Bulk | UniFET-II™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252, (D-Pak) | - | 114W (Tc) | - | ||||
|
FCH47N60-F133 | onsemi | MOSFET N-CH 600V 47A TO-247 | I lager4971 pcs | - | 600 V | 47A (Tc) | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270 nC @ 10 V | 8000 F @ 25 V | - | 10V | ±30V | N-Channel | - | FCH47N60 | Tube | SuperFET® II | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247-3 | - | 417W (Tc) | - | ||||
|
NP52N06SLG-E1-AY | Renesas Electronics America | MOSFET N-CH 60V 52A TO252 | I lager51010 pcs | N-Channel | - | 60V | 52A (Tc) | 17.5 mOhm @ 26A, 10V | - | 39nC @ 10V | 2100pF @ 10V | - | - | - | NP52N06SLG-E1-AY-ND NP52N06SLG-E1-AYTR |
- | - | - | NP52N06SLG-E1-AY | MOSFET N-CH 60V 52A TO252 | 1 (Unlimited) | 16 Weeks | N-Channel 60V 52A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK) | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (MP-3ZK) | - | 1.2W (Ta), 56W (Tc) | ||||
|
NTMFS4C025NT1G | onsemi | MOSFET N-CH 30V 20A/69A 5DFN | I lager74620 pcs | - | 30 V | 20A (Ta), 69A (Tc) | 3.41mOhm @ 30A, 10V | 2.1V @ 250µA | 26 nC @ 10 V | 1683 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | NTMFS4 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 2.55W (Ta), 30.5W (Tc) | - | ||||
|
FQB7N80TM | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | I lager4680 pcs | - | 800 V | 6.6A (Tc) | 1.5Ohm @ 3.3A, 10V | 5V @ 250µA | 52 nC @ 10 V | 1850 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Bulk | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK (TO-263) | - | 3.13W (Ta), 167W (Tc) | - | ||||
 |
APT22F120L | Microchip Technology | MOSFET N-CH 1200V 23A TO264 | I lager2500 pcs | - | 1200 V | 23A (Tc) | 700mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | 8370 pF @ 25 V | - | 10V | ±30V | N-Channel | - | APT22F120 | Tube | POWER MOS 8™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | - | TO-264 [L] | - | 1040W (Tc) | - | ||||
|
IRLC3615F | Infineon Technologies | MOSFET | I lager3920 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
|
IRFSL17N20D | Infineon Technologies | MOSFET N-CH 200V 16A TO262 | I lager4230 pcs | - | 200 V | 16A (Tc) | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | 1100 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | TO-262 | - | 3.8W (Ta), 140W (Tc) | - | ||||
|
IPB60R600CP | Infineon Technologies | N-CHANNEL POWER MOSFET | I lager48130 pcs | - | 600 V | 6.1A (Tc) | 600mOhm @ 3.3A, 10V | 3.5V @ 220µA | 27 nC @ 10 V | 550 pF @ 100 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | PG-TO263-3-2 | - | 60W (Tc) | - | ||||
|
DMN3029LFG-7 | Diodes Incorporated | MOSFET N-CH 30V 5.3A PWRDI333-8 | I lager386280 pcs | - | 30 V | 5.3A (Ta) | 18.6mOhm @ 10A, 10V | 1.8V @ 250µA | 11.3 nC @ 10 V | 580 pF @ 15 V | - | 4.5V, 10V | ±25V | N-Channel | - | DMN3029 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | POWERDI3333-8 | - | 1W (Ta) | - | ||||
|
IRF8707PBF | International Rectifier | MOSFET N-CH 30V 11A 8SO | I lager4090 pcs | - | 30 V | 11A (Ta) | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3 nC @ 4.5 V | 760 pF @ 15 V | - | - | ±20V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SO | - | 2.5W (Ta) | - | ||||
 |
CSD13202Q2 | Texas Instruments | MOSFET N-CH 12V 22A 6WSON | I lager158960 pcs | - | 12 V | 22A (Ta) | 9.3mOhm @ 5A, 4.5V | 1.1V @ 250µA | 6.6 nC @ 4.5 V | 997 pF @ 6 V | - | 2.5V, 4.5V | ±8V | N-Channel | - | CSD13202 | Tape & Reel (TR) | NexFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | - | 6-WSON (2x2) | - | 2.7W (Ta) | - | ||||
|
NTLJS3A18PZTWG | onsemi | MOSFET P-CH 20V 5A 6WDFN | I lager3940 pcs | - | 20 V | 5A (Ta) | 18mOhm @ 7A, 4.5V | 1V @ 250µA | 28 nC @ 4.5 V | 2240 pF @ 15 V | - | 1.5V, 4.5V | ±8V | P-Channel | - | NTLJS3A | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | - | 6-WDFN (2x2) | - | 700mW (Ta) | - | ||||
|
SIJ470DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V 58.8A PPAK SO-8 | I lager38510 pcs | - | 100 V | 58.8A (Tc) | 9.1mOhm @ 20A, 10V | 3.5V @ 250µA | 56 nC @ 10 V | 2050 pF @ 50 V | - | 7.5V, 10V | ±20V | N-Channel | - | SIJ470 | Tape & Reel (TR) | ThunderFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 5W (Ta), 56.8W (Tc) | - | ||||
|
CSD17570Q5B | Texas Instruments | MOSFET N-CH 30V 100A 8VSON | I lager35010 pcs | - | 30 V | 100A (Ta) | 0.69mOhm @ 50A, 10V | 1.9V @ 250µA | 121 nC @ 4.5 V | 13600 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | CSD17570Q5 | Tape & Reel (TR) | NexFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 8-VSON-CLIP (5x6) | - | 3.2W (Ta) | - | ||||
|
SI7703EDN-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 4.3A PPAK1212-8 | I lager4880 pcs | Schottky Diode (Isolated) | 20 V | 4.3A (Ta) | 48mOhm @ 6.3A, 4.5V | 1V @ 800µA | 18 nC @ 4.5 V | - | - | 1.8V, 4.5V | ±12V | P-Channel | - | SI7703 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | - | PowerPAK® 1212-8 | - | 1.3W (Ta) | - | ||||
 |
AON7452 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 2.5A/5.5A 8DFN | I lager4740 pcs | - | 100 V | 2.5A (Ta), 5.5A (Tc) | 310mOhm @ 2.5A, 10V | 4.7V @ 250µA | 4 nC @ 10 V | 185 pF @ 50 V | - | 7V, 10V | ±25V | N-Channel | - | AON745 | Tape & Reel (TR) | SDMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | 8-DFN-EP (3x3) | - | 3.1W (Ta), 17W (Tc) | - | ||||
 |
IXFK140N30P | IXYS | MOSFET N-CH 300V 140A TO264AA | I lager2822 pcs | - | 300 V | 140A (Tc) | 24mOhm @ 70A, 10V | 5V @ 8mA | 185 nC @ 10 V | 14800 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXFK140 | Tube | HiPerFET™, Polar | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | - | 1040W (Tc) | - | ||||
 |
JANTXV2N7224 | Microsemi Corporation | MOSFET N-CH 100V 34A TO254AA | I lager5250 pcs | - | 100 V | 34A (Tc) | 81mOhm @ 34A, 10V | 4V @ 250µA | 125 nC @ 10 V | - | - | 10V | ±20V | N-Channel | - | - | Bulk | Military, MIL-PRF-19500/592 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-254-3, TO-254AA (Straight Leads) | - | TO-254AA | - | 4W (Ta), 150W (Tc) | - | ||||
|
SIR880DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 60A PPAK SO-8 | I lager26527 pcs | - | 80 V | 60A (Tc) | 5.9mOhm @ 20A, 10V | 2.8V @ 250µA | 74 nC @ 10 V | 2440 pF @ 40 V | - | 4.5V, 10V | ±20V | N-Channel | - | SIR880 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 6.25W (Ta), 104W (Tc) | - | ||||
|
IPU60R600C6 | Infineon Technologies | N-CHANNEL POWER MOSFET | I lager4630 pcs | - | 600 V | 7.3A (Tc) | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | 440 pF @ 100 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | PG-TO251-3 | - | 63W (Tc) | - | ||||
|
DMT6012LSS-13 | Diodes Incorporated | MOSFET N-CH 60V 10.4A 8SO | I lager272390 pcs | - | 60 V | 10.4A (Ta) | 11mOhm @ 10A, 10V | 2V @ 250µA | 22.2 nC @ 10 V | 1522 pF @ 30 V | - | 4.5V, 10V | ±20V | N-Channel | - | DMT6012 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SO | - | 1.2W (Ta) | - | ||||
|
IRFU310BTU | Fairchild Semiconductor | N-CHANNEL POWER MOSFET | I lager324490 pcs | - | 400 V | 1.7A (Tc) | 3.4Ohm @ 850mA,10V | 4V @ 250µA | 10 nC @ 10 V | 330 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | - | TO-251 (IPAK) | - | 2.5W (Ta), 26W (Tc) | - | ||||
|
SIHF22N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 21A TO220 | I lager24912 pcs | - | 600 V | 21A (Tc) | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | 1920 pF @ 100 V | - | 10V | ±30V | N-Channel | - | SIHF22 | Tube | E | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220 Full Pack | - | 35W (Tc) | - | ||||
|
IRFR9120TRL | Vishay Siliconix | MOSFET P-CH 100V 5.6A DPAK | I lager4250 pcs | - | 100 V | 5.6A (Tc) | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | 390 pF @ 25 V | - | 10V | ±20V | P-Channel | - | IRFR9120 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | D-Pak | - | 2.5W (Ta), 42W (Tc) | - | ||||
|
DMN4010LFG-7 | Diodes Incorporated | MOSFET N-CH 40V 11.5A PWRDI3333 | I lager180330 pcs | - | 40 V | 11.5A (Ta) | 12mOhm @ 14A, 10V | 3V @ 250µA | 37 nC @ 10 V | 1810 pF @ 20 V | - | 4.5V, 10V | ±20V | N-Channel | - | DMN4010 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | - | PowerDI3333-8 | - | 930mW (Ta) | - | ||||
|
IRLU7821PBF | Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | I lager4910 pcs | - | 30 V | 65A (Tc) | 10mOhm @ 15A, 10V | 1V @ 250µA | 14 nC @ 4.5 V | 1030 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Tube | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 75W (Tc) | - | ||||
|
NVMFS5C410NWFAFT1G | onsemi | MOSFET N-CH 40V 46A/300A 5DFN | I lager11896 pcs | - | 40 V | 46A (Ta), 300A (Tc) | 0.92mOhm @ 50A, 10V | 3.5V @ 250µA | 86 nC @ 10 V | 6100 pF @ 25 V | - | 10V | ±20V | N-Channel | - | NVMFS5 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | - | 5-DFN (5x6) (8-SOFL) | - | 3.9W (Ta), 166W (Tc) | - | ||||
|
2SK3747-1E | onsemi | MOSFET N-CH 1500V 2A TO3PF-3 | I lager4600 pcs | - | 1500 V | 2A (Ta) | 13Ohm @ 1A, 10V | - | 37.5 nC @ 10 V | 380 pF @ 30 V | - | 10V | ±35V | N-Channel | - | 2SK3747 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | SC-94 | - | TO-3PF-3 | - | 3W (Ta), 50W (Tc) | - |